Two conductor levels block replication for 4 µm period ion implanted devices

Ion implanted devices are promising for high density bubble memories, however if one wants them to be driven by existing 1 Mbit LSI chips, a block replicate gate is a necessary function. Bubble stretching and cutting are done by two different conductors on two different levels in order to have good control of both actions. Device processing and gate operation are described. Good margins are obtained on a large temperature scale.