• DocumentCode
    1004071
  • Title

    2¿18 GHz distributed amplifier in hybrid form

  • Author

    Law, C.L. ; Aitchison, C.S.

  • Author_Institution
    Chelsea College, Department of Electronics, London, UK
  • Volume
    21
  • Issue
    16
  • fYear
    1985
  • Firstpage
    684
  • Lastpage
    685
  • Abstract
    Practical results for a four-stage hybrid distributed amplifier built on 25.4 mm-square alumina substrate using Avantek AT10600 MESFETs are presented. The power gain is (4.5±1.5) dB from 2 to 18 GHz with input and output return loss of better than 10 dB. The noise figure across that band is better than 6.3 dB.
  • Keywords
    Schottky gate field effect transistors; hybrid integrated circuits; microwave amplifiers; solid-state microwave circuits; wideband amplifiers; Avantek AT10600 MESFETs; SHF; alumina substrate; four-stage hybrid distributed amplifier; microwave amplifiers; noise figure; power gain; return loss; wideband amplifiers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850484
  • Filename
    4250691
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1004071