Title :
2¿18 GHz distributed amplifier in hybrid form
Author :
Law, C.L. ; Aitchison, C.S.
Author_Institution :
Chelsea College, Department of Electronics, London, UK
Abstract :
Practical results for a four-stage hybrid distributed amplifier built on 25.4 mm-square alumina substrate using Avantek AT10600 MESFETs are presented. The power gain is (4.5±1.5) dB from 2 to 18 GHz with input and output return loss of better than 10 dB. The noise figure across that band is better than 6.3 dB.
Keywords :
Schottky gate field effect transistors; hybrid integrated circuits; microwave amplifiers; solid-state microwave circuits; wideband amplifiers; Avantek AT10600 MESFETs; SHF; alumina substrate; four-stage hybrid distributed amplifier; microwave amplifiers; noise figure; power gain; return loss; wideband amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850484
