• DocumentCode
    1004088
  • Title

    Improvement of InP MISFET characteristics using infra-red lamp annealing

  • Author

    Hirota, Yusuke ; Okamura, M. ; Hisaki, T. ; Mikami, Osamu

  • Author_Institution
    NTT, Furukawa Research Section, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    21
  • Issue
    16
  • fYear
    1985
  • Firstpage
    686
  • Lastpage
    688
  • Abstract
    An infra-red lamp-annealing technique was employed for postannealing Si ion-implanted InP substrates. The effective electron mobility (¿eff) of SiO2-InP metal-insulator-semiconductor field-effect transistors fabricated using infrared lamp annealing is remarkably temperature-dependent. The maximum ¿eff is ¿ 11000 cm2/Vs at 75 K and 1500¿2500 cm2/Vs at room temperature.
  • Keywords
    III-V semiconductors; annealing; indium compounds; insulated gate field effect transistors; ion implantation; semiconductor technology; IR lamp annealing; InP MISFET characteristics; SiO2-InP metal-insulator-semiconductor field-effect transistors; electron mobility; ion implantation; post-annealing Si ion-implanted InP substrates; semiconductor technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850486
  • Filename
    4250693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1004088