Title :
High power, low threshold, singlemode 630 nm laser diodes
Author :
Geels, R.S. ; Welch, D.F. ; Scifres, D.R. ; Bour, D.P. ; Treat, D.W. ; Bringans, R.D.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
Abstract :
Output powers exceeding 45 mW under room temperature, continuous wave operation and threshold currents as low as 30 mA are demonstrated in singlemode AlGaInP visible laser diodes emitting at 636 nm. Singlemode operation is maintained at output powers exceeding 40 mW.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; 30 mA; 45 mW; 630 nm; AlGaInP; continuous wave operation; high power; laser diodes; room temperature; semiconductors; singlemode; threshold currents; visible lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921154
