Title :
Monitoring the final on-zone dynamics in TIL GTO thyristors
Author_Institution :
Polytechnic Institute, Department of Electronics, Bucharest, Romania
Abstract :
An original method that spotlights the increase of the final on-zone of the squeezed plasma with the level of anode current is described and implemented in the gated turn-off experimental investigation of TO-220-packaged, high-voltage TIL GTO thyristors.
Keywords :
semiconductor device models; thyristors; TIL GTO thyristors; TO-220-packaged; final on-zone dynamics; high-voltage TIL GTO thyristors; squeezed plasma; two interdigitation level;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850489
