DocumentCode
1004124
Title
Monitoring the final on-zone dynamics in TIL GTO thyristors
Author
Silard, A.P.
Author_Institution
Polytechnic Institute, Department of Electronics, Bucharest, Romania
Volume
21
Issue
16
fYear
1985
Firstpage
691
Lastpage
693
Abstract
An original method that spotlights the increase of the final on-zone of the squeezed plasma with the level of anode current is described and implemented in the gated turn-off experimental investigation of TO-220-packaged, high-voltage TIL GTO thyristors.
Keywords
semiconductor device models; thyristors; TIL GTO thyristors; TO-220-packaged; final on-zone dynamics; high-voltage TIL GTO thyristors; squeezed plasma; two interdigitation level;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850489
Filename
4250696
Link To Document