• DocumentCode
    1004201
  • Title

    Avalanche electron injection in ultrathin oxides grown in N2O ambient

  • Author

    Joshi, A.B. ; Kim, Jung-Ho ; Kwong, D.L.

  • Author_Institution
    Texas Univ., Austin, TX, USA
  • Volume
    28
  • Issue
    19
  • fYear
    1992
  • Firstpage
    1824
  • Lastpage
    1825
  • Abstract
    An investigation of the charge trapping properties of thin gate oxides grown in N2O ambient in a conventional furnace, using the avalanche electron injection technique, is reported. Significantly different charge trapping behaviour is observed for the two oxide thicknesses under investigation. Whereas thicker oxides (82 AA) predominantly show electron trapping during avalanche injection, positive charge accumulation is observed in thinner oxides (57 AA). Generation of new damage in N2O oxides due to Fowler-Nordheim stressing has also been studied by avalanche injection.
  • Keywords
    dielectric thin films; electron traps; hole traps; impact ionisation; insulating thin films; silicon compounds; 57 A; 82 A; Fowler-Nordheim stressing; N 2O ambient; Si xO yN z thin films; avalanche electron injection technique; charge trapping behaviour; charge trapping properties; conventional furnace; oxide thicknesses; positive charge accumulation; thin gate oxides; ultrathin oxides;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921163
  • Filename
    256121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1004201