Title :
Avalanche electron injection in ultrathin oxides grown in N2O ambient
Author :
Joshi, A.B. ; Kim, Jung-Ho ; Kwong, D.L.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
An investigation of the charge trapping properties of thin gate oxides grown in N2O ambient in a conventional furnace, using the avalanche electron injection technique, is reported. Significantly different charge trapping behaviour is observed for the two oxide thicknesses under investigation. Whereas thicker oxides (82 AA) predominantly show electron trapping during avalanche injection, positive charge accumulation is observed in thinner oxides (57 AA). Generation of new damage in N2O oxides due to Fowler-Nordheim stressing has also been studied by avalanche injection.
Keywords :
dielectric thin films; electron traps; hole traps; impact ionisation; insulating thin films; silicon compounds; 57 A; 82 A; Fowler-Nordheim stressing; N 2O ambient; Si xO yN z thin films; avalanche electron injection technique; charge trapping behaviour; charge trapping properties; conventional furnace; oxide thicknesses; positive charge accumulation; thin gate oxides; ultrathin oxides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921163
