DocumentCode :
1004256
Title :
Defect-free modulator at 1.06 mu m using a strain-balanced multiquantum well
Author :
Goossen, K.W. ; Cunningham, John E. ; Jan, W.Y.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Volume :
28
Issue :
19
fYear :
1992
Firstpage :
1833
Lastpage :
1834
Abstract :
Recently, the authors reported defect-free, InGaAs-GaAsP multiquantum well modulators operating at 1015 nm, but with an unusual dual-peak spectra that resulted in slight degradation in performance. Now they report a similar sample grown under reactor gas overpressure that has normal spectra. The dual-peak spectra are therefore attributed to microscopic domain formation that the gas overpressure inhibits by reducing surface atom mobility. The operation has also been extended to 1.06 mu m, the Nd:YAG wavelength.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; 1015 to 1060 nm; InGaAs-GaAsP; MQW modulators; defect-free type; dual-peak spectra; microscopic domain formation; reactor gas overpressure; strain-balanced multiquantum well; surface atom mobility reduction;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921169
Filename :
256127
Link To Document :
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