DocumentCode
1004264
Title
Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier
Author
Hamada, Hiroyuki ; Tominaga, Kazuhiro ; Shono, M. ; Honda, Shogo ; Yodoshi, K. ; Yamaguchi, Toru
Author_Institution
Sanyo Electric Co. Ltd., Osaka, Japan
Volume
28
Issue
19
fYear
1992
Firstpage
1834
Lastpage
1836
Abstract
610 nm band AlGaInP compressively strained multiquantum-well laser diodes with a multiquantum barrier have been successfully fabricated by MOCVD using
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; vapour phase epitaxial growth; 25 degC; 610 nm; 615 nm; AlGaInP; CW operation; GaAs; MOCVD; compressively strained MQW; laser diodes; multiquantum barrier; multiquantum well; room temperature operation; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921170
Filename
256128
Link To Document