DocumentCode
1004284
Title
Cost, Performance, and Size Tradeoffs for Different Levels in a Memory Hierarchy*
Author
Rege, S.L.
Author_Institution
Burroughs Corporation
Volume
9
Issue
4
fYear
1976
fDate
4/1/1976 12:00:00 AM
Firstpage
43
Lastpage
51
Abstract
Until recently, electronically addressable devices such as ferrite core, plated wire, semiconductor memories, and electromechanically addressable devices such as magnetic tapes, disks, and drums were the few technologies from which a computer system designer could build a memory system. A number of different new technologies and devices have been developed that close the "access gap"14between the two dissimilar technologies mentioned above. These include charge-coupled devices (CCD\´s),2bubble memories,4electron beam addressed memories (EBAM),17and domain tip propagation (DOT).16Other technologies like CMOS1and integrated injection logic (I2L),9compete directly with the existing technologies. Table 1 (see p. 46) shows the possibility of a six-level hierarchy and some cost and performance projections for these technologies.
Keywords
CMOS technology; Costs; Electromechanical systems; Electron beams; Magnetic cores; Magnetic devices; Magnetic semiconductors; Semiconductor memory;
fLanguage
English
Journal_Title
Computer
Publisher
ieee
ISSN
0018-9162
Type
jour
DOI
10.1109/C-M.1976.218559
Filename
1647334
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