• DocumentCode
    1004284
  • Title

    Cost, Performance, and Size Tradeoffs for Different Levels in a Memory Hierarchy*

  • Author

    Rege, S.L.

  • Author_Institution
    Burroughs Corporation
  • Volume
    9
  • Issue
    4
  • fYear
    1976
  • fDate
    4/1/1976 12:00:00 AM
  • Firstpage
    43
  • Lastpage
    51
  • Abstract
    Until recently, electronically addressable devices such as ferrite core, plated wire, semiconductor memories, and electromechanically addressable devices such as magnetic tapes, disks, and drums were the few technologies from which a computer system designer could build a memory system. A number of different new technologies and devices have been developed that close the "access gap"14between the two dissimilar technologies mentioned above. These include charge-coupled devices (CCD\´s),2bubble memories,4electron beam addressed memories (EBAM),17and domain tip propagation (DOT).16Other technologies like CMOS1and integrated injection logic (I2L),9compete directly with the existing technologies. Table 1 (see p. 46) shows the possibility of a six-level hierarchy and some cost and performance projections for these technologies.
  • Keywords
    CMOS technology; Costs; Electromechanical systems; Electron beams; Magnetic cores; Magnetic devices; Magnetic semiconductors; Semiconductor memory;
  • fLanguage
    English
  • Journal_Title
    Computer
  • Publisher
    ieee
  • ISSN
    0018-9162
  • Type

    jour

  • DOI
    10.1109/C-M.1976.218559
  • Filename
    1647334