DocumentCode :
1004284
Title :
Cost, Performance, and Size Tradeoffs for Different Levels in a Memory Hierarchy*
Author :
Rege, S.L.
Author_Institution :
Burroughs Corporation
Volume :
9
Issue :
4
fYear :
1976
fDate :
4/1/1976 12:00:00 AM
Firstpage :
43
Lastpage :
51
Abstract :
Until recently, electronically addressable devices such as ferrite core, plated wire, semiconductor memories, and electromechanically addressable devices such as magnetic tapes, disks, and drums were the few technologies from which a computer system designer could build a memory system. A number of different new technologies and devices have been developed that close the "access gap"14between the two dissimilar technologies mentioned above. These include charge-coupled devices (CCD\´s),2bubble memories,4electron beam addressed memories (EBAM),17and domain tip propagation (DOT).16Other technologies like CMOS1and integrated injection logic (I2L),9compete directly with the existing technologies. Table 1 (see p. 46) shows the possibility of a six-level hierarchy and some cost and performance projections for these technologies.
Keywords :
CMOS technology; Costs; Electromechanical systems; Electron beams; Magnetic cores; Magnetic devices; Magnetic semiconductors; Semiconductor memory;
fLanguage :
English
Journal_Title :
Computer
Publisher :
ieee
ISSN :
0018-9162
Type :
jour
DOI :
10.1109/C-M.1976.218559
Filename :
1647334
Link To Document :
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