Title :
Numerical simulation of carrier transport in Schottky barrier diodes
Author :
Shibkov, Andrei ; Ershov, Maxim ; Ryzhii, Victor
Author_Institution :
Inst. of Phys. & Technol., Acad. of Sci., Moscow, Russia
Abstract :
Carrier transport in Si Schottky diodes is analysed. A novel model for the recombination velocity suitable both for low and high biases has been derived and compared with previous models. The influence of the boundary condition on simulation results was found to be more significant for C-V than for I-V characteristics.
Keywords :
Schottky-barrier diodes; carrier mobility; electron-hole recombination; elemental semiconductors; semiconductor device models; silicon; C-V characteristics; I-V characteristics; Schottky barrier diodes; Si; boundary condition; carrier transport; high bias; low bias; model; recombination velocity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921174
