Title :
Low threshold FS-BH laser on p-InP substrate grown by all-MOCVD
Author :
Ohkura, Y. ; Kimura, Tomohiro ; Nishimura, T. ; Mizuguchi, K. ; Murotani
Author_Institution :
Mitsubishi Electric Corp., Hyogu, Japan
Abstract :
A novel InGaAsP FS-BH laser structure using the selective growth characteristics of MOCVD on crystal facets has been developed. A threshold current as low as 12 mA and output power of 40 mW under CW operation have been achieved in the laser.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; leakage currents; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 12 mA; 40 mW; CW operation; FS-BH laser; InGaAsP-InP; InP substrate; MOCVD; crystal facets; fabrication method; low threshold laser; p-type substrate; selective growth characteristics; semiconductor lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921176
