• DocumentCode
    1004431
  • Title

    Radiative efficiency in low-dimensional semiconductor structures

  • Author

    Burt, M.G. ; Taylor, R.I.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    21
  • Issue
    17
  • fYear
    1985
  • Firstpage
    733
  • Lastpage
    734
  • Abstract
    The ratio of the spontaneous emission and Auger recombination rates for quantum wells and wires is compared theoretically with that for bulk structures. Dramatic improvements in radiative efficiency are not predicted for these novel structures unless carrier densities are greatly reduced.
  • Keywords
    Auger effect; electron-hole recombination; laser theory; luminescence of inorganic solids; semiconductor junction lasers; semiconductor superlattices; Auger recombination rates; carrier densities; low-dimensional semiconductor structures; quantum wells; radiative efficiency; semiconductor lasers; spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850517
  • Filename
    4250726
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1004431