Title :
CW operation of 1.5 ¿m InGaAsP/InP BH lasers with a reactive-ion-etched facet
Author :
Saito, Hiroshi ; Noguchi, Y. ; Nagai, Hiroto
Author_Institution :
NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
Abstract :
The reactive-ion-etching (RIE) technique utilising a TiO2 mask and Cl2-Ar gas is successfully applied to facet mirror fabrication of 1.5 ¿m InGaAsP/InP buried-heterostructure (BH) lasers. Room-temperature CW operation has been achieved with a structure having one etched and one cleaved facet. A threshold current value of 30 mA at 25°C has been achieved for a laser with a 380 ¿m cavity length.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical workshop techniques; semiconductor junction lasers; sputter etching; 1.5 microns wavelength; 30 mA threshold current; BH lasers; CW operation; Cl2-Ar gas; III-V semiconductors; RIE; TiO2 mask; buried-heterostructure; cleaved face; facet mirror fabrication; optical workshop techniques; reactive-ion-etched facet; room temperature operation; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850527
