Title :
High-power operation of index-guided inverted channel substrate planar (ICSP) lasers
Author :
Yang, Jie J. ; Hong, Choong ; Niesen, J. ; Figueroa, L.
Author_Institution :
TRW, Redondo Beach, USA
Abstract :
An easily fabricated high-power index-guided laser, the inverted channel substrate planar (ICSP) structure, has been developed using the two-step metal-organic chemical vapour deposition (MOCVD) technique. Linear output power characteristics were observed to 30 mW CW on submount with junction side up without facet coatings. The device operated in a stable single mode to a power >25 mW. Improved ICSP lasers with facet coatings demonstrate a stable high output power of 65 mW CW and a differential quantum efficiency of 60%.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical waveguides; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaAlAs/GaAs; III-V semiconductors; MOCVD; VPE; epitaxial growth; facet coatings; high-power operation; index-guided laser; inverted channel substrate planar structure; metal-organic chemical vapor deposition; semiconductor lasers; stable single mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850529
