DocumentCode
1004642
Title
Direct electro-optic sampling of GaAs integrated circuits
Author
Weingarten, Kurt J. ; Rodwell, Mark J. W. ; Heinrich, H.K. ; Kolner, B.H. ; Bloom, D.M.
Author_Institution
Stanford University, Edward L. Ginzton Laboratory, Stanford, USA
Volume
21
Issue
17
fYear
1985
Firstpage
765
Lastpage
766
Abstract
We report the first electro-optic sampling measurements made directly within an integrated circuit. Using the electro-optic effect in GaAs, we have noninvasively probed the internal voltage waveforms of a 2¿12 GHz GaAs FET travelling-wave amplifier integrated circuit driven by a microwave signal source.
Keywords
III-V semiconductors; electro-optical effects; gallium arsenide; integrated circuit testing; measurement by laser beam; microwave integrated circuits; 2 GHz to 12 GHz; FET travelling-wave amplifier; GaAs integrated circuits; IC testing; MMIC; Nd:YAG laser; SHF; electro-optic sampling; internal voltage waveforms; microwave signal source; monolithic microwave IC; noninvasive probe measurement;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850539
Filename
4250755
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