Title :
Monte Carlo particle simulation of a GaAs short-channel MESFET
Author :
Awano, Y. ; Tomizawa, K. ; Hashizume, N. ; Kawashima, M.
Author_Institution :
Electrotechnical Laboratory, Tsukuba, Japan
Abstract :
A Monte Carlo particle simulation of a 0.25 ¿m-long gate (and 0.25 ¿m-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 ¿m were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; semiconductor device models; GaAs short-channel MESFET; Monte Carlo particle simulation; doping density; drain current; electron transport; near-ballistic nature; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830014
