Title :
Quaternary 1.5 μm (InGaAsP/InP) buried crescent lasers with separate optical confinement
Author :
van der Ziel, J.P. ; Temkin, H. ; Logan, R.A.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
InGaAsP (λ = 1.5 μm) crescent geometry lasers grown in etched V grooves are characterised. The active layer is surrounded by asymmetric InGaAsP (λ = 1.3 μm) cladding layers which provide separate optical confinement. The lasers have 25-30 mA thresholds and external quantum efficiencies of 0.5-0.6 at 300 K. Fundamental mode operation is obtained up to 15 mW/facet at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; III-V semiconductors; InGaAsP-InP quaternary buried crescent lasers; active layer; cladding layers; etched V grooves; external quantum efficiency; fundamental mode operation; optical confinement; thresholds;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830081
