Title :
Determination of minority carrier lifetime and effective back surface recombination velocity in BSF silicon solar cells from transient measurements
Author :
Jain, S.C. ; Agarwal, Sheetal K. ; Ray, U.C.
Author_Institution :
Solidstate Physics Laboratory, Delhi, India
Abstract :
The method of determining the base lifetime ¿B and the effective surface recombination velocity Seff in a BSF solar cell from the transient decay of open-circuit voltage and short-circuit current is extended to include emitter recombinations. If the emitter recombinations in modern Si solar cells are neglected in interpreting the experimental data, the experimental value of Seff is found to be in large error.
Keywords :
carrier lifetime; electron-hole recombination; elemental semiconductors; photovoltaic cells; silicon; solar cells; BSF; Si solar cells; back surface field; effective back surface recombination velocity; elemental semiconductors; emitter recombinations; minority carrier lifetime; open-circuit voltage; photovoltaic cells; short-circuit current; transient measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830253
