• DocumentCode
    1004908
  • Title

    Monolithic PIN/preamplifier circuit integrated on a GaAs substrate

  • Author

    Wada, O. ; Hamaguchi, Hiroki ; Miura, Shun ; Makiuchi, M. ; Yamakoshi, Shigenobu ; Sakurai, Takayasu ; Nakai, K. ; Iguchi, Kenichi

  • Author_Institution
    Fujitsu Ltd., Atsugi, Japan
  • Volume
    19
  • Issue
    24
  • fYear
    1983
  • Firstpage
    1031
  • Lastpage
    1032
  • Abstract
    An AlGaAs/GaAs PIN photodiode and a GaAs transimpedance amplifier including six FETs have been monolithically integrated on a GaAs substrate. A photoreceiver operation exhibiting an excellent linearity has been demonstrated. The photodiode sensitivity of 0.44 A/W and the amplifier transimpedance of 1.0 × l04 V/A have been determined from the measurement.
  • Keywords
    III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; photodiodes; preamplifiers; AlGaAs/GaAs PIN photodiode; FETs; GaAs substrate; PIN/preamplifier circuit; monolithic IC; optoelectronic integrated circuits; p-i-n photodiode; photoreceiver; transimpedance amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830699
  • Filename
    4250793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1004908