Title :
Monolithic PIN/preamplifier circuit integrated on a GaAs substrate
Author :
Wada, O. ; Hamaguchi, Hiroki ; Miura, Shun ; Makiuchi, M. ; Yamakoshi, Shigenobu ; Sakurai, Takayasu ; Nakai, K. ; Iguchi, Kenichi
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
Abstract :
An AlGaAs/GaAs PIN photodiode and a GaAs transimpedance amplifier including six FETs have been monolithically integrated on a GaAs substrate. A photoreceiver operation exhibiting an excellent linearity has been demonstrated. The photodiode sensitivity of 0.44 A/W and the amplifier transimpedance of 1.0 × l04 V/A have been determined from the measurement.
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; photodiodes; preamplifiers; AlGaAs/GaAs PIN photodiode; FETs; GaAs substrate; PIN/preamplifier circuit; monolithic IC; optoelectronic integrated circuits; p-i-n photodiode; photoreceiver; transimpedance amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830699
