DocumentCode
1004999
Title
A power SIPOS MISS device
Author
Ang, Simon S.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
Volume
35
Issue
8
fYear
1988
fDate
8/1/1988 12:00:00 AM
Firstpage
1378
Lastpage
1381
Abstract
Power metal-insulator-silicon-switch (MISS) devices fabricated using semi-insulating polysilicon (SIPOS) for the insulator layer are discussed. The SIPOS MISS devices have an active area of 4.5 mm2 and can carry in excess of 8 A. The typical switching voltage of these devices is 20 to 25 V with a negative temperature coefficient. They have a typical switching time of 200 ns and a very fast turn-off time. No degradation in device performance is observed after high current pulsing. Power SIPOS MISS devices offer an alternative to conventional four-layer switching devices, yielding faster switching characteristics while maintaining process compatibility
Keywords
metal-insulator-semiconductor devices; negative resistance; semiconductor switches; 20 to 25 V; 200 ns; 8 A; MIS switch; SIPOS; Si; high current pulsing; negative temperature coefficient; power semi-conductor switching device; semi-insulating poly-Si; typical switching time; Chemical reactors; Degradation; Etching; Fabrication; Insulation; Optical films; Packaging; Silicon compounds; Switching circuits; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2562
Filename
2562
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