A power SIPOS MISS device

Power metal-insulator-silicon-switch (MISS) devices fabricated using semi-insulating polysilicon (SIPOS) for the insulator layer are discussed. The SIPOS MISS devices have an active area of 4.5 mm² and can carry in excess of 8 A. The typical switching voltage of these devices is 20 to 25 V with a negative temperature coefficient. They have a typical switching time of 200 ns and a very fast turn-off time. No degradation in device performance is observed after high current pulsing. Power SIPOS MISS devices offer an alternative to conventional four-layer switching devices, yielding faster switching characteristics while maintaining process compatibility