• DocumentCode
    1005024
  • Title

    GaAlAs semiconductor diode laser 4-ary frequency shift key modulation at 100 Mbit/s

  • Author

    Welford, D. ; Alexander, S.B.

  • Author_Institution
    MIT Lincoln Laboratory, Lexington, USA
  • Volume
    21
  • Issue
    1
  • fYear
    1985
  • Firstpage
    12
  • Lastpage
    13
  • Abstract
    4-ary FSK modulation of a semiconductor diode laser by injection current modulation has been demonstrated at a rate of 100 Mbit/s. The injection current modulator has a modular design which allows expansion to M-ary FSK with independent control of each tone frequency. The design allows considerable flexibility in the logical relationship between the source data and the selected frequency tones.
  • Keywords
    III-V semiconductors; frequency shift keying; optical modulation; semiconductor junction lasers; 100 Mbit/s; 4-ary FSK modulation; GaAlAs; III-V semiconductors; frequency tones; injection current modulation; semiconductor diode laser; tone frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850008
  • Filename
    4250808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1005024