• DocumentCode
    1005079
  • Title

    New technique for measuring small MOS gate currents

  • Author

    Garrigues, M. ; Pavlin, A.

  • Author_Institution
    Ecole Centrale de Lyon, Laboratoire dElectronique, Automatique et Mesures Electriques, UA (CNRS) no. 848 `Génie Electronique¿, Ecully, France
  • Volume
    21
  • Issue
    1
  • fYear
    1985
  • Firstpage
    16
  • Lastpage
    17
  • Abstract
    A new technique is presented for the measurement of small gate currents on MOSFET devices in noisy environments. Hybrid technology is used to build the equivalent of a double-gate FAMOS-type device using two conventional MOSFET devices. Measurements of substrate hot-electron currents are given as an example.
  • Keywords
    electric current measurement; hot carriers; insulated gate field effect transistors; MOSFET devices; double-gate FAMOS-type device; noisy environments; small gate currents; substrate hot-electron currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850013
  • Filename
    4250814
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1005079