Title :
New technique for measuring small MOS gate currents
Author :
Garrigues, M. ; Pavlin, A.
Author_Institution :
Ecole Centrale de Lyon, Laboratoire dElectronique, Automatique et Mesures Electriques, UA (CNRS) no. 848 `Génie Electronique¿, Ecully, France
Abstract :
A new technique is presented for the measurement of small gate currents on MOSFET devices in noisy environments. Hybrid technology is used to build the equivalent of a double-gate FAMOS-type device using two conventional MOSFET devices. Measurements of substrate hot-electron currents are given as an example.
Keywords :
electric current measurement; hot carriers; insulated gate field effect transistors; MOSFET devices; double-gate FAMOS-type device; noisy environments; small gate currents; substrate hot-electron currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850013
