DocumentCode :
1005159
Title :
All optical multiple-quantum-well waveguide switch
Author :
Li Kam Wa, P. ; Sitch, J.E. ; Mason, N.J. ; Roberts, Jeffrey S. ; Robson, P.N.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Volume :
21
Issue :
1
fYear :
1985
Firstpage :
26
Lastpage :
28
Abstract :
By increasing the input light intensity to a GaAs/GaAlAs multiple-quantum-well waveguide, an induced phase shift of up to ¿ radians has been detected. Partial switching of light between two such coupled waveguides by variation of the input light intensity has been observed for the first time.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical waveguide components; GaAs/GaAlAs multiple-quantum-well waveguide; III-V semiconductors; coupled waveguides; induced phase shift; input light intensity; optical multiple-quantum-well waveguide switch;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19850021
Filename :
4250825
Link To Document :
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