• DocumentCode
    1005187
  • Title

    Hot-hole-induced degradation in depletion-mode n-channel MOSFETs

  • Author

    Stoev, I. ; Bauer, Florian ; Balk, P.

  • Author_Institution
    Aachen Technical University, Institute of Semiconductor Electronics, SFB 202, Aachen, West Germany
  • Volume
    21
  • Issue
    1
  • fYear
    1985
  • Firstpage
    30
  • Lastpage
    31
  • Abstract
    Injection and trapping of hot holes was studied in n-channel depletion-mode MOSFETs and compared to that in enhancement devices. The rate of device degradation was found to decrease with increasing channel doping. A model is proposed explaining this behaviour from the current transport in the buried channel and from the effect of the channel doping level on the field near the drain.
  • Keywords
    hot carriers; insulated gate field effect transistors; semiconductor device models; channel doping; current transport; depletion-mode n-channel MOSFETs; device degradation; doping level; hot holes; model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850024
  • Filename
    4250828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1005187