DocumentCode
1005197
Title
Determination of drift mobility and carrier concentration in semiconductors using surface acoustic wave amplifier structure
Author
Baudrand, H. ; Taha, T.E. ; Benslama, M.
Author_Institution
ENSEEIHT, Laboratoire de Microondes, Toulouse, France
Volume
21
Issue
1
fYear
1985
Firstpage
32
Lastpage
33
Abstract
Experimental data are analysed in order to determine the electric field at which the synchronism occurs in a semiconductor piezoelectric amplifier structure. In the interaction region the electron mobility of a sample of high resistivity silicon is measured to be in the order of 1268 cm2/Vs. The carrier concentration is deduced as a result of the comparison between the experimental and theoretical results.
Keywords
carrier mobility; piezoelectric devices; semiconductors; surface acoustic wave devices; carrier concentration; drift mobility; electric field; electron mobility; piezoelectric amplifier structure; semiconductors; surface acoustic wave amplifier structure; synchronism;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850025
Filename
4250829
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