Title :
Band-to-band Auger processes in 0.95 eV bandgap (λ=1.3 μm) (AlxGa1-x)0.48In0.52As lattice matched to InP
Author :
Bardyszewski, W. ; Yevick, D.
Author_Institution :
University of Lund, Department of Theoretical Physics, Lund, Sweden
Abstract :
We calculate the temperature dependence of the CHSH and CHCC pure collision and photon-assisted Auger coefficients for highly excited Al0.13Ga0.35In0.52As (λ=1.3 μm). Our method incorporates refined kp wavefunction overlap integrals, spectral density functions and integration techniques. The predicted room-temperature AlGaInAs Auger coefficient is slightly smaller than that of 1.3 /sub mu/m InGaAsP.
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; band structure of crystalline semiconductors and insulators; electron-hole recombination; gallium arsenide; indium compounds; semiconductor epitaxial layers; 0.95 eV bandgap; CHCC; CHSH; III-V semiconductor; InP; band band Auger processes; band structure; collision Auger coefficients; epitaxial layers; integration techniques; kp wavefunction overlap integrals; lattice matching; photon-assisted Auger coefficients; spectral density functions; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850040
