Title :
Modelling DC characteristics of HEMTs
Author :
Abuelma´atti, Muhammad Taher
Author_Institution :
Gulf Polytechnic, Isa Town, Bahrain
Abstract :
A simple empirical equation is presented to relate the drain current to drain-source and gate-source voltages of the high electron mobility transistors (HEMTs). This equation covers the entire ID/VDS characteristics. The accuracy of this equation is better than the theoretically developed separate equations.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; DC characteristics; GaAs-GaAlAs modulation doped structure; I-V characteristics; drain current; drain source voltages; empirical equation; gate-source voltages; high electron mobility transitions; modelling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850048
