• DocumentCode
    1005452
  • Title

    Modelling DC characteristics of HEMTs

  • Author

    Abuelma´atti, Muhammad Taher

  • Author_Institution
    Gulf Polytechnic, Isa Town, Bahrain
  • Volume
    21
  • Issue
    2
  • fYear
    1985
  • Firstpage
    69
  • Lastpage
    70
  • Abstract
    A simple empirical equation is presented to relate the drain current to drain-source and gate-source voltages of the high electron mobility transistors (HEMTs). This equation covers the entire ID/VDS characteristics. The accuracy of this equation is better than the theoretically developed separate equations.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; DC characteristics; GaAs-GaAlAs modulation doped structure; I-V characteristics; drain current; drain source voltages; empirical equation; gate-source voltages; high electron mobility transitions; modelling;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850048
  • Filename
    4250856
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1005452