Title :
Optical time domain reflectometer using a photon-counting InGaAs/InP avalanche photodiode at 1.3 μm
Author :
Levine, B.F. ; Bethea, C.G. ; Cohen, L.G. ; Campbell, Joe C. ; Morris, G.D.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
We report the first photon-counting optical time domain reflectometer using an InGaAsInP avalanche photodiode. The measured sensitivity at a temperature of -40°C is comparable to that of the best present conventional PINFET receiver results.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photon counting; time-domain reflectometry; 1.3 microns; optical time domain reflectometer; photon-counting InGaAs/InP avalanche photodiode; sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850057
