Title :
Fabrication of widegap-emitter Schottky-collector transistor using GaInAs/InP
Author :
Emeis, N. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
A widegap-emitter transistor with a Schottky collector has been fabricated using n-InP as the emitter, p-GaInAs as the base layer and Ni as the Schottky metallisation. The fabricated transistors show a current gain better than 5 in the common-emitter configuration.
Keywords :
III-V semiconductors; Schottky effect; bipolar transistors; gallium arsenide; indium compounds; GaInAs/InP Schottky collector transistor; Ni; Schottky metallisation; bipolar transistor; common-emitter configuration; current gain; n-InP; p-GaInAs; widegap-emitter transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850058
