DocumentCode
1005634
Title
4*4 directional coupler switch matrix with an InGaAlAs/InAlAs multiquantum well structure
Author
Takeuchi, H. ; Hasumi, Y. ; Kondo, Satoshi ; Noguchi, Y.
Author_Institution
NTT Optoelectron. Labs., Kanagawa, Japan
Volume
29
Issue
6
fYear
1993
fDate
3/18/1993 12:00:00 AM
Firstpage
523
Lastpage
524
Abstract
A 4*4 directional coupler switch matrix is developed which uses, for the first time, the quantum confined Stark effect of InGaAlAs/InAlAs multiquantum well structures. The rearrangeable nonblocking 4*4 network with six 2*2 switches is shown to be perfectly functional with switching voltages between 5 and 6 V and crosstalk below -17 dB in all the operation states.
Keywords
III-V semiconductors; Stark effect; aluminium compounds; directional couplers; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical couplers; optical switches; semiconductor quantum wells; 17.5 to 18.5 dB; 4*4 directional coupler switch matrix; 5 to 6 V; InGaAlAs-InAlAs multiquantum well structure; crosstalk; quantum confined Stark effect; rearrangeable nonblocking 4*4 network; switching voltages; transmission loss;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930349
Filename
256262
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