Title :
45 GHz active HEMT mixer
Author_Institution :
TRW Electronic Systems Group, Redondo Beach, USA
Abstract :
A low-noise 45 GHz mixer has been realised using a high electron mobility transistor (HEMT). This is the first reported active mixer above 30 GHz and the first reported HEMT mixer. The mixer exhibits 1.5 dB maximum gain at 4 dBm local oscillator (LO) power and 8.1 dB noise figure, including a 2.6 dB NF IF amplifier, at 2 dBm LO power.
Keywords :
high electron mobility transistors; mixers (circuits); solid-state microwave circuits; 1.5 dB maximum gain; 4 dBm local oscillator power; 45 GHz active HEMT mixer; 8.1 dB noise figure; high electron mobility transistor; microwave mixer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850072
