DocumentCode :
1005728
Title :
Hole traps in Be-doped MBE InGaP
Author :
Kim, Hak S. ; Hafich, M.J. ; Patrizi, Gary A. ; Nanda, Ashish ; Woods, L.M. ; Robinson, G.Y.
Author_Institution :
Colorado State Univ., Fort Collins, CO, USA
Volume :
29
Issue :
6
fYear :
1993
fDate :
3/18/1993 12:00:00 AM
Firstpage :
535
Lastpage :
536
Abstract :
Deep level transient spectroscopy has been used to characterise p-type In0.48Ga0.52P grown by gas-source molecular beam epitaxy. Three hole traps were detected in Be-doped material, with thermal emission energies of approximately 0.2-0.3, 0.7-0.8, and 1.0-1.3 eV and trap concentrations less than 4*1014, 9*1014, and 1015 cm-3, respectively.
Keywords :
III-V semiconductors; beryllium; chemical beam epitaxial growth; deep level transient spectroscopy; gallium compounds; hole traps; indium compounds; semiconductor epitaxial layers; DLTS; In 0.48Ga 0.52P:Be; gas-source molecular beam epitaxy; hole traps; thermal emission energies; trap concentrations;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930357
Filename :
256270
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1005728
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