Title :
Theoretical analysis of the nonlinear behaviour of a loss-free distributed amplifier
Author :
Paschalidou, V. ; Aitchison, C.S.
Author_Institution :
Chelsea College, Department of Electronics, London, UK
Abstract :
In the letter the theoretical analysis of the behaviour of a nonlinear n-stage (n-MESFET) loss-free distributed amplifier is presented together with the results of this analysis. The transconductance of the MESFET was considered as the nonlinear element, while the other elements are assumed to be linear.
Keywords :
Schottky gate field effect transistors; nonlinear network analysis; wideband amplifiers; equivalent circuit; n-MESFET lossfree distributed amplifier; nonlinear behaviour; nonlinear element; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850075
