Title :
High performance InGaAs/GaAlAs laser diodes for electronic/photonic integrated circuit applications
Author :
Ou, S.S. ; Yang, Jie J. ; Hess, Christopher ; Jansen, Maarten
Author_Institution :
TRW Res. Center, Redondo Beach, CA, USA
fDate :
3/18/1993 12:00:00 AM
Abstract :
High-performance, short-cavity, strained-layer InGaAs/GAlAs laser diodes that are suitable for two-dimensional electronic-photonic integrated circuit (EPIC) applications have been demonstrated. Continuous-wave threshold currents as low as 4 mA, and singlemode output powers in excess of 100 mW (maximum output power: 120 mW) were achieved for as-cleaved, reactive-ion-etched, 3.5 mu m-wide, 200 mu m-long, InGaAs/GaAlAs ridge-waveguide laser diodes in the junction-side up configuration.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; laser cavity resonators; optical waveguides; semiconductor lasers; 100 mW; 120 mW; 4 mA; CW threshold current; InGaAs-GaAlAs; OEIC; junction-side up configuration; laser diodes; photonic integrated circuit applications; reactive-ion-etched; ridge-waveguide; semiconductor lasers; short-cavity; singlemode output powers; strained-layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930362
