DocumentCode
1005797
Title
Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solution
Author
Dumas, J.M. ; Lecrosnier, D. ; Paugam, J. ; Vuchener, C.
Author_Institution
CNET, LAB/ICM, Lannion, France
Volume
21
Issue
3
fYear
1985
Firstpage
115
Lastpage
116
Abstract
A gradual degradation has been observed in the RF performance of GaAs power FETs. Electrical and physical analyses have been carried out, indicating the role played by the surface. A plasma enhanced chemical vapour deposited silicon nitride film is established as a suitable surface passivation.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; passivation; power transistors; reliability; GaAs power MESFET; RF performance; plasma enhanced CVD Si3N4; reliability; surface passivation; surface-induced degradation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850080
Filename
4250890
Link To Document