• DocumentCode
    1005828
  • Title

    Comment on ´Linear, electronically tunable resistor´

  • Author

    Tsividis, Yannis ; Vavelidis, Kostis

  • Author_Institution
    Nat. Tech. Univ. of Athens, Greece
  • Volume
    29
  • Issue
    6
  • fYear
    1993
  • fDate
    3/18/1993 12:00:00 AM
  • Firstpage
    556
  • Lastpage
    557
  • Abstract
    For the original article see ibid., vol.28, no.25, p.2303-5 (1992). A method to linearise the channel of a MOSFET by applying appropriate bias voltages across its gate and body (both considered as resistors) has recently been published by the commenters. They would like to add one paper by R.W. Coen and R.S. Muller (see Solid State Electron. vol.23, p.35-40, 1980) to the list of References; in that paper, the application of bias across a resistive gate has been reported as part of a procedure for measuring carrier velocity.
  • Keywords
    MOS integrated circuits; active networks; linear integrated circuits; resistors; tuning; MOSFET; bias voltages; carrier velocity measurement; channel linearisation; electronically tunable resistor; resistive gate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930371
  • Filename
    256280