DocumentCode
1005828
Title
Comment on ´Linear, electronically tunable resistor´
Author
Tsividis, Yannis ; Vavelidis, Kostis
Author_Institution
Nat. Tech. Univ. of Athens, Greece
Volume
29
Issue
6
fYear
1993
fDate
3/18/1993 12:00:00 AM
Firstpage
556
Lastpage
557
Abstract
For the original article see ibid., vol.28, no.25, p.2303-5 (1992). A method to linearise the channel of a MOSFET by applying appropriate bias voltages across its gate and body (both considered as resistors) has recently been published by the commenters. They would like to add one paper by R.W. Coen and R.S. Muller (see Solid State Electron. vol.23, p.35-40, 1980) to the list of References; in that paper, the application of bias across a resistive gate has been reported as part of a procedure for measuring carrier velocity.
Keywords
MOS integrated circuits; active networks; linear integrated circuits; resistors; tuning; MOSFET; bias voltages; carrier velocity measurement; channel linearisation; electronically tunable resistor; resistive gate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930371
Filename
256280
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