DocumentCode
1005836
Title
Shallow p+ layers in In0.53Ga0.47As by Hg implantation
Author
L´Haridon, H. ; Favennec, P.N. ; Salvi, M. ; Razeghi, M.
Author_Institution
CNET, Laboratory ICM/TOH, Lannion, France
Volume
21
Issue
3
fYear
1985
Firstpage
122
Lastpage
124
Abstract
We demonstrate for the first time a shallow p+¿n homojunction fabricated on In0.53Ga0.47As by mercury ion implantation. Implanted mercury behaves as an acceptor in In0.53Ga0.47As and does not diffuse towards the bulk. Mercury implantation can be a good technique in realising a shallow p+¿n junction in GaInAs.
Keywords
III-V semiconductors; carrier density; gallium arsenide; indium compounds; ion implantation; mercury (metal); p-n homojunctions; Hg implantation; III-V semiconductor; In0.53Ga0.47As; In0.53Ga0.47As:Hg; acceptor; carrier distribution; ion implantation; shallow p+ layers; shallow p+-n homojunction;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850085
Filename
4250895
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