Title :
Shallow p+ layers in In0.53Ga0.47As by Hg implantation
Author :
L´Haridon, H. ; Favennec, P.N. ; Salvi, M. ; Razeghi, M.
Author_Institution :
CNET, Laboratory ICM/TOH, Lannion, France
Abstract :
We demonstrate for the first time a shallow p+¿n homojunction fabricated on In0.53Ga0.47As by mercury ion implantation. Implanted mercury behaves as an acceptor in In0.53Ga0.47As and does not diffuse towards the bulk. Mercury implantation can be a good technique in realising a shallow p+¿n junction in GaInAs.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; indium compounds; ion implantation; mercury (metal); p-n homojunctions; Hg implantation; III-V semiconductor; In0.53Ga0.47As; In0.53Ga0.47As:Hg; acceptor; carrier distribution; ion implantation; shallow p+ layers; shallow p+-n homojunction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850085
