Title :
Low-noise HEMT fabricated by MOCVD
Author :
Takakuwa, H. ; Kato, Y. ; Watanabe, S. ; Mori, Y.
Author_Institution :
Sony Corporation, Research Department, Semiconductor Group, Atsugi, Japan
Abstract :
Low-noise HEMTs with GaAlAs/GaAs heterostructures have been successfully fabricated using metal organic chemical vapour deposition (MOCVD). Hall mobilities of the two-dimensional electron gas at the interface are 8000 and 148 000 cm2/Vs at 300 and 77 K. These are comparable to the best results yet reported using molecular beam epitaxy (MBE). The HEMTs fabricated by MOCVD with a 0.8 ¿m-long gate have exhibited a noise figure of 1.47 dB with 9 dB associated gain at 12 GHz and transconductance of 190 mS/mm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; solid-state microwave devices; vapour phase epitaxial growth; 12 GHz; GaAlAs/GaAs heterostructures; Hall mobilities; MOCVD; epitaxial layers; metal organic chemical vapour deposition; microwave HEMT; noise figure 1.47 dB; transconductance 190 mS/mm; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850088
