Title :
Effects of growth temperature and [PH3]/[In(C2H5)3] on purity of epitaxial InP grown by metalorganic chemical vapour deposition
Author :
Uwai, K. ; Mikami, O. ; Susa, N.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
High-purity undoped InP epitaxial layers (ND ¿ NA = 5 × 1014 cm¿3, ¿77¿105 cm2/Vs) are grown by low-pressure metalorganic chemical vapour deposition. The carrier concentrations decrease and the electron mobilities increase as the growth temperature decreases from 700°C to 575°C and the mole fraction ratios ([PH3]/[In(C2H5)3]) increase from 29 to 290.
Keywords :
III-V semiconductors; carrier density; carrier mobility; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; III-V semiconductor; InP epitaxial layers; PH3; carrier concentrations; electron mobilities; growth temperature; metalorganic chemical vapour deposition; mole fraction ratios; purity; triethylindium;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850093
