Title :
A W-Band Medium Power Amplifier in 90 nm CMOS
Author :
Jiang, Yu-Sian ; Tsai, Jeng-Han ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng. & Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei
Abstract :
A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (P sat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.
Keywords :
CMOS integrated circuits; microwave power amplifiers; power integrated circuits; W-band CMOS medium power amplifier; circuit; frequency 90 GHz to 108 GHz; gain 17 dB; maximum small signal gain; mixed signal-radio frequency CMOS process; saturation output power; size 90 nm; transistor; voltage 1.5 V; Bandwidth; CMOS process; Circuits; Gain measurement; Power amplifiers; Power generation; RF signals; Radio frequency; Radiofrequency amplifiers; Signal processing; CMOS; W-band; microwave monolithic integrated circuit (MMIC); power amplifier (PA);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2008.2007712
