• DocumentCode
    1005990
  • Title

    Low dark current InGaAs PIN photodiodes grown by molecular beam epitaxy

  • Author

    Cinguino, P. ; Genova, F. ; Rigo, C. ; Stano, A.

  • Author_Institution
    CSELT¿Centro Studi e Laboratori Telecomunicazioni, Torino, Italy
  • Volume
    21
  • Issue
    4
  • fYear
    1985
  • Firstpage
    139
  • Lastpage
    140
  • Abstract
    High-quality InGaAs PIN photodiodes have been made from high-purity layers grown on InP substrate by molecular beam epitaxy. The diodes are top-illuminated mesa-type passivated and planarised by polyimide. The devices exhibit dark current densities as low as 2.3 × 10¿5 A/cm2 at ¿10 V with a breakdown voltage of ¿80 V. These values are comparable with those obtained by other more conventional growth techniques, and are the best so far reported by MBE.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photodiodes; semiconductor growth; InGaAs PIN photodiodes; InP substrate; breakdown voltage -80 V; dark current density 2.3Ã\x9710-5 A/cm2; mesatype passivated diodes; molecular beam epitaxy; polyimide planarisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850099
  • Filename
    4250915
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1005990