• DocumentCode
    1006076
  • Title

    Enhanced performance of 2 μm N-MOSFETs in doubly recrystallised SOS films

  • Author

    Maddox, R.L. ; Golecki, I.

  • Author_Institution
    Rockwell International Corporation, Defense Electronics Operations, Microelectronics Research & Development Center, Anaheim, USA
  • Volume
    21
  • Issue
    4
  • fYear
    1985
  • Firstpage
    154
  • Lastpage
    155
  • Abstract
    The field-effect channel electron mobility in 0.5 μm-thick silicon-on-sapphire films is increased by up to 22%, while the back-channel leakage current is decreased 100-fold, following a double recrystallisation by means of Si ion implantation/amorphisation and solid-phase epitaxy. The improved electrical performance correlates with a more than 100-fold reduction in the microtwin density, as measured by X-ray diffraction.
  • Keywords
    field effect integrated circuits; insulated gate field effect transistors; ion implantation; 2 microns channel length; NMOS devices; Si ion implantation; Si-on-sapphire; amorphisation; back-channel leakage current; doubly recrystallised SOS films; field-effect channel electron mobility; monolithic IC; n+ Si gate isoplanar process; solid-phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850109
  • Filename
    4250926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1006076