Title :
Enhanced performance of 2 μm N-MOSFETs in doubly recrystallised SOS films
Author :
Maddox, R.L. ; Golecki, I.
Author_Institution :
Rockwell International Corporation, Defense Electronics Operations, Microelectronics Research & Development Center, Anaheim, USA
Abstract :
The field-effect channel electron mobility in 0.5 μm-thick silicon-on-sapphire films is increased by up to 22%, while the back-channel leakage current is decreased 100-fold, following a double recrystallisation by means of Si ion implantation/amorphisation and solid-phase epitaxy. The improved electrical performance correlates with a more than 100-fold reduction in the microtwin density, as measured by X-ray diffraction.
Keywords :
field effect integrated circuits; insulated gate field effect transistors; ion implantation; 2 microns channel length; NMOS devices; Si ion implantation; Si-on-sapphire; amorphisation; back-channel leakage current; doubly recrystallised SOS films; field-effect channel electron mobility; monolithic IC; n+ Si gate isoplanar process; solid-phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850109
