• DocumentCode
    1006132
  • Title

    Two-dimensional array of GaInAsP/InP surface-emitting lasers

  • Author

    Uchiyama, S. ; Iga, Kenichi

  • Author_Institution
    Tokyo Institute of Technology, Research Laboratory of Precision Machinery & Electronics, Yokohama, Japan
  • Volume
    21
  • Issue
    4
  • fYear
    1985
  • Firstpage
    162
  • Lastpage
    164
  • Abstract
    We have improved the mirror quality of a GaInAsP/InP surface emitting laser with a ring electrode on a round mesa cap. The minimum threshold current has been reduced to 35 mA at 77 K, and the uniformity of the laser threshold has been improved. The first two-dimensional (2×2) laser array has been demonstrated.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; semiconductor junction lasers; 35 mA minimum threshold current; 77K; GaInAsP/InP; III-V semiconductors; cavity resonators; integrated optics; mirror quality improvement; ring electrode; round mesa cap; semiconductor lasers; surface-emitting lasers; two-dimensional array;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850115
  • Filename
    4250933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1006132