Title :
110 GHz GaAs FET oscillator
Author :
Tserng, Hua-Quen ; Kim, Bumki
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Abstract :
A W-band GaAs FET oscillator has been demonstrated for the first time. A 75 ¿m gate width device with sub-half-micrometre (0.2 ¿m) electron-beam defined gates was used as a common-gate oscillator for operation in the 70 to 110 GHz frequency range. The highest oscillation frequency achieved was 110 GHz.
Keywords :
III-V semiconductors; microwave oscillators; solid-state microwave circuits; 70 GHz to 110 GHz; GaAs FET oscillator; III-V semiconductors; W-band; common-gate oscillator; electron-beam defined gates; oscillation frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850125
