• DocumentCode
    1006249
  • Title

    High-speed GaInAs Schottky photodetector

  • Author

    Emeis, N. ; Schumacher, Hermann ; Beneking, H.

  • Author_Institution
    Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    21
  • Issue
    5
  • fYear
    1985
  • Firstpage
    180
  • Lastpage
    181
  • Abstract
    A Schottky contact photodiode on p-type GaInAs for application at ¿=1.3¿1.6 ¿m has been fabricated and tested. The coaxial type device shows an external quantum efficiency of 19% at ¿=1.27 ¿m, and rise and fall times of less than 15 ps.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; photodiodes; 1.3 microns to 1.6 microns; GaInAs Schottky photodetector; III-V semiconductors; Schottky contact photodiode; coaxial type device; external quantum efficiency; fall times; rise times;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850127
  • Filename
    4250947
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1006249