• DocumentCode
    1006351
  • Title

    Deposition and properties of polycrystalline β-SiC films using LPCVD with different dopant amount

  • Author

    Noh, S. ; Fu, X. ; Chen, L. ; Mehregany, M.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
  • Volume
    42
  • Issue
    13
  • fYear
    2006
  • fDate
    6/22/2006 12:00:00 AM
  • Firstpage
    775
  • Lastpage
    777
  • Abstract
    The physical and electrical properties of polycrystalline β-SiC were studied according to different nitrogen doping concentration. The crystalline peaks SiC(111), SiC(220), SiC(311) and SiC(222) appeared in XRD analysis of poly-SiC films deposited on Si substrates covered with thermally-grown SiO2. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The size of resistance ratio was much bigger in films with low doping. On the other hand, the linearity of resistance variation was better in films with high doping.
  • Keywords
    chemical vapour deposition; nitrogen; scanning electron microscopy; semiconductor doping; semiconductor thin films; silicon compounds; wide band gap semiconductors; LPCVD; SiC:Ni; SiO2; XRD analysis; dopant amount; nitrogen doping concentration; polycrystalline films; resistance ratio;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20060865
  • Filename
    1648583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1006351