• DocumentCode
    1006361
  • Title

    Dynamic impact of self-heating on input impedance of bipolar transistors

  • Author

    de Souza, A.A.L. ; Nallatamby, J.C. ; Prigent, M. ; Quéré, R.

  • Author_Institution
    XLIM-Dep. Univ. of Limoges, Brive, France
  • Volume
    42
  • Issue
    13
  • fYear
    2006
  • fDate
    6/22/2006 12:00:00 AM
  • Firstpage
    777
  • Lastpage
    778
  • Abstract
    The influence of self-heating on the input impedance of bipolar transistors is analytically derived and experimental data presented to validate the analysis. The effect is mainly governed by the collector biasing conditions, and may be advantageously explored up to the thermal response cutoff frequency of the device.
  • Keywords
    bipolar transistors; semiconductor device models; bipolar transistor input impedance; collector biasing conditions; dynamic self-heating impact; forward transconductance; input impedance; output conductance; thermal response cutoff frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20060904
  • Filename
    1648584