Title :
Dependence of linewidth enhancement factor α on waveguide structure in semiconductor lasers
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
In semiconductor lasers, the ratio α of the real part to the imaginary part of the change in refractive index due to the change in carrier density determines the magnitude of dynamic and static line broadenings. The letter reports that the effective value of α depends on the structure of the waveguide, where both index and gain mechanisms induce transverse-mode guiding.
Keywords :
optical waveguides; refractive index; semiconductor junction lasers; spectral line breadth; carrier density; dynamic line broadening; gain mechanisms; linewidth enhancement factor; refractive index; semiconductor lasers; static line broadenings; transverse-mode guiding; waveguide structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850141
