Title :
High-power and high-speed GaAlAs-GaAs LEDs fabricated by MOCVD growth
Author :
Nitta, Katsumi ; Komatsubara, T. ; Kinoshita, Hiroyuki ; Iizuka, Yuki ; Nakamura, Mitsutoshi ; Beppu, T.
Author_Institution :
Toshiba Corporation, Electron Devices Laboratory, Research & Development Center, Kawasaki, Japan
Abstract :
GaAlAs light-emitting diodes fabricated by a metalorganic chemical vapour deposition method exhibit high-power and high-speed response characteristics at least as good as those made by liquid phase epitaxial growth. Maximum external quantum efficiency, standard graded index fibre input power and cutoff frequency at a forward current of 100 mA are 3.9%, 163 ¿W and 73 MHz. respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; semiconductor growth; vapour phase epitaxial growth; GaAlAs light-emitting diodes; GaAlAs-GaAs LEDs; MOCVD growth; cutoff frequency 73 MHz; external quantum efficiency 3.9%; high-power; high-speed response characteristics; standard graded index fibre input power 163 microwatts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850146
