DocumentCode
1006536
Title
Disordering by Zn-diffusion of InGaAs/InAlAs MQW superlattice structure grown by MBE
Author
Kawamura, Yuriko ; Asahi, H. ; Kohzen, A. ; Wakita, Ken
Author_Institution
NTT Electrical Communications Laboratories, Atsugi, Japan
Volume
21
Issue
6
fYear
1985
Firstpage
218
Lastpage
219
Abstract
Disordering of MBE-grown InGaAs/InAlAs MQW (multiquantum well) superlattice structures by Zn-diffusion was studied for the first time. Optical measurements and sputtering Auger electron measurements revealed that the InGaAs/InAlAs MQW superlattice structure is easily disodered by Zn-diffusion. On the other hand, the MQW superlattice structure is stable against the thermal treatment up to 700°C.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor junction lasers; semiconductor superlattices; zinc; III-V semiconductors; InGaAs/InAlAs MQW superlattice structure; MBE; Zn-diffusion; laser diodes; sputtering Auger electron measurements; superlattice disordering;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850154
Filename
4250975
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