Title :
Disordering by Zn-diffusion of InGaAs/InAlAs MQW superlattice structure grown by MBE
Author :
Kawamura, Yuriko ; Asahi, H. ; Kohzen, A. ; Wakita, Ken
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
Disordering of MBE-grown InGaAs/InAlAs MQW (multiquantum well) superlattice structures by Zn-diffusion was studied for the first time. Optical measurements and sputtering Auger electron measurements revealed that the InGaAs/InAlAs MQW superlattice structure is easily disodered by Zn-diffusion. On the other hand, the MQW superlattice structure is stable against the thermal treatment up to 700°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor junction lasers; semiconductor superlattices; zinc; III-V semiconductors; InGaAs/InAlAs MQW superlattice structure; MBE; Zn-diffusion; laser diodes; sputtering Auger electron measurements; superlattice disordering;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850154
